st3414a n channel enhancement mode mosfet 3.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3414a 2012. v1 description st3414a is the nchannel logic enhancement mode pow er field effect transistor which is produced using high cell density, dmos trench te chnology.this high density process is especially tailored to minimize onstate resista nce.these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, a nd low inline power loss are required. the product is in a very small outline su rface mount package. pin configuration sot-23 1.gate 2.source 3.drain part marking sot-23 y: year code a: week code feature 20v/4.2a, r ds(on) = 45m ( typ.) @vgs = 4.5v 20v/3.4a, r ds(on) = 60 m @vgs = 2.5v 20v/2.8a, r ds(on) = 80 m @vgs = 1.8v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability sot23package design 3 1 2 d g s 3 1 2 14ya
st3414a n channel enhancement mode mosfet 3.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3414a 2012. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drainsource voltage v dss 20 v gatesource voltage v gss 12 v continuous drain currenttj=150 ) t a =25 t a =70 i d 3.0 2.2 a pulsed drain current i dm 30 a continuous source current (diode conduction) i s 1.2 a power dissipation t a =25 t a =70 p d 1.25 0.8 w operation junction temperature t j 55/150 storgae temperature range t stg 55/150 thermal resistancejunction to ambient r ja 125 /w
st3414a n channel enhancement mode mosfet 3.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3414a 2012. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drainsource breakdown voltage v (br)dss v gs =0v,i d =250ua 20 v gate threshold voltage v gs(th) v ds =vgs,i d =250ua 0.40 1.0 v gate leakage current i gss v ds =0v,v gs = 12v 100 na zero gate voltage drain current i dss v ds =20v,v gs =0v 1 ua v ds =20v,v gs =0v t j =55 5 drainsource onresistance r ds(on) v gs =4.5v,i d =3.2a v gs =2.5v,i d =2.4a v gs =1.8v,i d =1.8a 0.045 0.060 0.080 forward transconductance g fs v ds =4v,i d =3.6v 10 s diode forward voltage v sd i s =1.6a,v gs =0v 0.8 1.2 v dynamic total gate charge q g v ds =10v v gs =4.5v i d =2.8a 4.8 8 nc gatesource charge q gs 1.0 gatedrain charge q gd 1.0 input capacitance c iss v ds =6v v gs =0v f=1mh z 485 pf output capacitance c oss 85 reverse transfer capacitance c rss 40 turnon time t d(on) tr v dd =6v r l =6 i d =1.0a v gen =4.5v r g =6 8 14 ns 12 18 turnoff time t d(off) tf 30 35 12 16
st3414a n channel enhancement mode mosfet 3.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3414a 2012. v1 typical characterictics (25 unless noted)
st3414a n channel enhancement mode mosfet 3.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3414a 2012. v1 typical characterictics (25 unless note d )
st3414a n channel enhancement mode mosfet 3.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st3414a 2012. v1 sot-23- package outline
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